GFC-S Series
Pivotal Systems’ GFC-S paves the way for the future of gas flow control. The GFC-S combines Pivotal’s patented, high accuracy GFM system with patented control valve technology. As such, it leapfrogs the current MFC technology by offering an order of magnitude improvement on key flow metrics, thereby enabling advanced wafer-manufacturing processes. At Pivotal Systems, we aim to significantly enhance fab productivity and capital efficiency by utilizing our innovative solutions.
SERIES FEATURES
Innovative Position Control Technology
wide flow range
0.025 sccm to 2000 sccm, Full Scale 0.5 -100%
Industry's best flow accuracy for the entire flow range:
±0.5% of Setpoint for 0.5 -100% Full Scale
Fastest Settling Time for Turn-On and Turndown:
≦ 100ms: 10% -100% Full Scale;
≦ 50ms option available
Effect of Pressure and Temperature:
Invariant
Machine Learning:
valve position updated
Open flow path with no small orifices or capillary tubes
BENEFITS
No zero drift
calibration and maintenance free
Nist traceable in automated in-situ calibration
Fastest Settling Time for Turn-On and Turndown:
3100ms: 00ms:0.5 100% Full
Scale % -10% Full Scale
exceptional corrosive gas performance
Automated In Situ Calibration
NIST Traceable
Advanced flow monitoring & self diagnosis
Applications
Suitable for most semiconductor Etching, CVD, ALD and PVD processes requiring relatively low flow rate with high vacuum at downstream.
Series Specifications
Performance
Flow range
0.1 - 2000 sccm (4 part numbers to cover this range)
Flow Accuracy
±0.5% of Setpoint for actual gas:
0.1 - 20 sccm (GFC20) 1 - 200 sccm (GFC200)
5 - 1000 sccm (GFC1000), 10 - 2000 sccm (GFC2000)
Settling Time
10% - 100% FS ≤ 100 ms, 0.5% - 10% FS ≤ 300 ms*
Leak Integrity
< 1E-9 atm.cc/sec (He)
Leak By Rate
0.01 sccm (GFC20), 0.1 sccm (GFC200),
0.5 sccm (GFC1000), 1.0 sccm (GFC2000)
Repeatability
±0.2% of setpoint for 0.5%-100% FS
Operating Conditions
Supply Pressure
Standard: 100 - 300kPaG (14.5 - 43.5 psig)
Low pressure gases C4H9F, SiH2Cl2, C3H1OSI, BCl3, C4F6, C4F6-q, C4F8, C5F8, SiCIA and WF6 the inlet pressure range can be as low as -81 kPaG (-11.7 psig) Refer to the Gas Bin Table on page 5 Et 6 for the specific ranges.
Low pressure gases C4H9F, SiH2Cl2, C3H1OSI, BCl3, C4F6, C4F6-q, C4F8, C5F8, SiCIA and WF6 the inlet pressure range can be as low as -81 kPaG (-11.7 psig) Refer to the Gas Bin Table on page 5 Et 6 for the specific ranges.
Downstream Pressure
Vacuum to 53 kPa (0 - 400 Torr)
Proof Pressure
2.07 MPaG (300 psig)
Design Pressure
(Burst Pressure)
2.65 MPaG (385 psig)
Operating Temperature
Standard: 15-60°C, High Temperature: 15-70°C
Materials
Wetted Surface
316 SS per Semi F20
Surface Finish
5 pin average Ra
Seals
Metal (PCTFE - Optional)
Electrical
EtherCAT
24 VDC
DeviceNet
11 - 24 VDC, 5 W
Analog and RS-485
±15 VDC, 150 mA
In-Rush Current
<200 mA
APPLICATIONs
Critical Etch
Deposition- CVD & PVD
Critical Low Flow
Atomic Layer Etch
